High speed handling of ultra-small chips by selective laser bonding and debonding

US11222862B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Qianwen Chen · Yorktown Heights, US
• Bing Dang · Chappaqua, US
• Russell A. Budd · North Salem, US
• Bo Wen · New York, US
• Li-Wen Hung · Mahopac, US
• Jae-Woong Nah · Closter, US
• John U. Knickerbocker · Wappingers Falls, US

Key dates

• Filing date: Oct 21, 2019
• Grant date: Jan 11, 2022
• Expiry date: Jan 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.