Semiconductor device including a high density MIM capacitor and method
US11222946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2019 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | May 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a 3-dimensional metal-insulator-metal super high density (3D-MIM-SHD) capacitor and semiconductor device are disclosed herein. A method includes depositing a base layer of a first dielectric material over a semiconductor substrate and etching a series of recesses in the base layer. Once the series of recesses have been etched into the base layer, a series of conductive layers and dielectric layers may be deposited within the series of recesses to form a three dimensional corrugated stack of conductive layers separated by the dielectric layers. A first contact plug may be formed through a middle conductive layer of the corrugated stack and a second contact plug may be formed through a top conductive layer and a bottom conductive layer of the corrugated stack. The contact plugs electrically couple the conductive layers to one or more active devices of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.