Variable resistance semiconductor device having oxidation-resistant electrode

US11223012B2 · kind B2 · utility

Assignee

• SK hynix Inc. · KR

Inventors

• Woo-Young Park · Godeok-myeon, KR
• Young Seok Ko · Yongin-si, KR
• Soo Gil Kim · Seojong-myeon, KR

Key dates

• Filing date: Sep 20, 2019
• Grant date: Jan 11, 2022
• Expiry date: Oct 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

A variable resistance semiconductor device includes a lower conductive wiring; a bottom electrode over the lower conductive wiring; a selection element pattern over the bottom electrode; a first intermediate electrode over the selection element pattern; a second intermediate electrode over the first intermediate electrode; a variable resistance element pattern over the second intermediate electrode; a top electrode over the variable resistance element pattern; and an upper conductive wiring over the top electrode. The first intermediate electrode includes a first material. The second intermediate electrode includes a second material which has a better oxidation resistance and a higher work function than the first material.