Semiconductor device and manufacturing method thereof
US11227828B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a capacitor structure, and a conductive contact. The semiconductor substrate has at least one semiconductor fin thereon. The gate structure is disposed across the semiconductor fin. The capacitor structure is disposed on the gate structure. The capacitor structure includes a ferroelectric layer and a first metal layer disposed on the ferroelectric layer. The capacitor structure is sandwiched between the conductive contact and the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.