Inventor · Hsinchu, TW

Chia-Cheng Ho

48Patents
5h-index
41Co-inventors
65Inventor score

Filing activity: Jul 15, 2010 → Aug 10, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8796759B2 Fin-like field effect transistor (FinFET) device and method of manufacturing same Electricity 222 Active
US8881066B2 Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device Electricity 20 Active
US8609499B2 FinFETs and the methods for forming the same Electricity 15 Active
US8759184B2 FinFETs and the methods for forming the same Electricity 15 Active
US9029958B2 FinFETs and the methods for forming the same Electricity 6 Active
US10818562B2 Semiconductor structure and testing method thereof Electricity 4 Active
US10707347B2 Transistor with a negative capacitance and a method of creating the same Electricity 3 Active
US11164970B2 Contact field plate Electricity 3 Active
US9601598B2 Method of manufacturing a fin-like field effect transistor (FinFET) device Electricity 3 Active
US10141310B2 Short channel effect suppression Electricity 3 Active
US9379217B2 FinFETs and the methods for forming the same Electricity 3 Active
US10861946B1 Field plate structure for high voltage device Electricity 2 Active
US10872893B2 Dual nitride stressor for semiconductor device and method of manufacturing Electricity 1 Active
US11227828B2 Semiconductor device and manufacturing method thereof Electricity 1 Active
US10732209B2 Semiconductor test device and manufacturing method thereof Electricity 1 Active
US10670641B2 Semiconductor test device and manufacturing method thereof Electricity 1 Active
US10395937B2 Fin patterning for semiconductor devices Electricity 1 Active
US11121225B2 Field plate structure to enhance transistor breakdown voltage Electricity 1 Active
US10505040B2 Method of manufacturing a semiconductor device having a gate with ferroelectric layer Electricity 1 Active
US8906710B2 Monitor test key of epi profile Electricity 1 Active
US11387360B2 Transistor with a negative capacitance and a method of creating the same Electricity 1 Active
US11411086B2 Field plate and isolation structure for high voltage device Electricity 1 Active
US10797174B2 Semiconductor device with fin end spacer dummy gate and method of manufacturing the same Electricity 1 Active
US9728461B2 Method of forming semiconductor device with different threshold voltages Electricity 1 Active
US9768301B2 Short channel effect suppression Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.