Semiconductor device and method for manufacturing the same
US11227934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Mar 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
According to one embodiment, a semiconductor device includes a substrate, a plurality of insulating films and a plurality of electrode films provided alternately on the substrate. The semiconductor device further includes a first insulating film, a first charge storage film, a third insulating film, a second charge storage film, a second insulating film, and a first semiconductor film that are sequentially provided along at least one side surface of each of the electrode films. The first charge storage film includes either (i) molybdenum, or (ii) titanium and nitrogen, and the second charge storage film includes a semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.