Inventor · Yokohama, JP

Daisuke Ikeno

29Patents
6h-index
40Co-inventors
65Inventor score

Filing activity: Jan 26, 2010 → Feb 25, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9406694B1 Semiconductor device and method for manufacturing the same Electricity 63 Active
US8587043B2 Magnetoresistive random access memory and method of manufacturing the same Electricity 45 Active
US8604573B2 Semiconductor memory device Electricity 41 Active
US9570464B1 Method for manufacturing semiconductor device Electricity 25 Active
US8188547B2 Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes Electricity 9 Active
US9178137B2 Magnetoresistive element and magnetic memory Electricity 7 Active
US9780111B2 Semiconductor device and method for manufacturing the same Electricity 5 Active
US8653614B2 Semiconductor memory device and method for manufacturing the same Electricity 5 Active
US9673217B1 Semiconductor device and method for manufacturing same Electricity 4 Active
US9196823B2 Magnetoresistive effect element Electricity 4 Active
US8710604B2 Magnetoresistive element and manufacturing method of the same Electricity 3 Active
US10566280B2 Semiconductor device and method of manufacturing the same Electricity 3 Active
US8982614B2 Magnetoresistive effect element and manufacturing method thereof Electricity 2 Active
US9911753B2 Semiconductor device and method for manufacturing semiconductor device Electricity 2 Active
US8410529B2 Magnetic random access memory and method of fabricating the same Electricity 1 Active
US9905462B2 Semiconductor device and method for manufacturing the same Electricity 1 Active
US10269825B2 Semiconductor device and method for manufacturing same Electricity 1 Active
US8741161B2 Method of manufacturing semiconductor device Electricity 1 Active
US9779978B2 Method of manufacturing semiconductor device and semiconductor manufacturing apparatus Electricity 1 Active
US9231192B2 Semiconductor memory device and method for manufacturing the same Electricity 1 Active
US11990417B2 Semiconductor memory device with different fluorine concentrations in sub conductive layers Electricity 0 Active
US11605643B2 Semiconductor memory device and manufacturing method thereof Electricity 0 Active
US12408340B2 Memory device including a conductive film with interfacial roughness Electricity 0 Active
US8878320B2 Semiconductor memory device Electricity 0 Active
US11227934B2 Semiconductor device and method for manufacturing the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.