Nanosheet field-effect transistor device and method of forming
US11227956B2 · kind B2 · utility
7Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | May 26, 2020 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | May 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes: a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions, where the nanosheets comprise a first semiconductor material; inner spacers between the nanosheets and at opposite ends of the nanosheets, where there is an air gap between each of the inner spacers and a respective source/drain region of the source/drain regions; and a gate structure over the fin and between the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.