Optoelectronic semiconductor device

US11227977B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventor

• Benjamin Michaelis · Regensburg, DE

Key dates

• Filing date: Dec 19, 2018
• Grant date: Jan 18, 2022
• Expiry date: Jan 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8314

Abstract

An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.