Methods of atomic layer deposition for selective film growth
US11230764B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jun 22, 2018 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jan 2, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.