Jacob Woodruff
20Patents
5h-index
35Co-inventors
65Inventor score
Filing activity: Aug 11, 2011 → Nov 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10032628B2 | Source/drain performance through conformal solid state doping | Electricity | 447 | Active |
| US9312042B2 | Metal seed layer for solar cell conductive contact | Emerging Cross-Sectional Technologies | 18 | Active |
| US9981286B2 | Selective formation of metal silicides | Performing Operations; Transporting | 9 | Active |
| US9711396B2 | Method for forming metal chalcogenide thin films on a semiconductor device | Electricity | 7 | Active |
| US9461134B1 | Method for forming source/drain contact structure with chalcogen passivation | Electricity | 7 | Active |
| US9520562B2 | Method of making a resistive random access memory | Electricity | 5 | Active |
| US9607842B1 | Methods of forming metal silicides | Electricity | 4 | Active |
| US11230764B2 | Methods of atomic layer deposition for selective film growth | Chemistry; Metallurgy | 3 | Active |
| US10892156B2 | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures | Electricity | 2 | Active |
| US10770286B2 | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures | Electricity | 2 | Active |
| US8889469B2 | Multi-nary group IB and VIA based semiconductor | Emerging Cross-Sectional Technologies | 1 | Active |
| US8729543B2 | Multi-nary group IB and VIA based semiconductor | Emerging Cross-Sectional Technologies | 1 | Active |
| US9472757B2 | Method of making a resistive random access memory device | Electricity | 1 | Active |
| US10199234B2 | Methods of forming metal silicides | Electricity | 0 | Active |
| US12163223B2 | Process for the production of a molecular layer and electronic component comprising same | Chemistry; Metallurgy | 0 | Active |
| US11976352B2 | Methods of vapor deposition of ruthenium using an oxygen-free co-reactant | Chemistry; Metallurgy | 0 | Active |
| US11848200B2 | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures | Electricity | 0 | Active |
| US12297537B2 | Compounds and methods for selectively forming metal-containing films | Electricity | 0 | Active |
| US12035546B2 | Method for producing an electronic component which includes a self-assembled monolayer | Electricity | 0 | Active |
| US10665452B2 | Source/drain performance through conformal solid state doping | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.