Pellicle and method for manufacturing pellicle
US11231647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2018 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jan 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.