Nonvolatile semiconductor storage device and method for performing a read operation on the same
US11232843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2020 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Sep 1, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor storage device includes a first channel layer including a first drain-side select transistor, a first source-side select transistor, and a first memory cell transistor, a second channel layer including a second drain-side select transistor, a second source-side select transistor, and a second memory cell transistor, a word line that functions as a gate electrode of the first and second memory cell transistors, and a controller. When a read operation is executed on the first memory cell transistor, the controller turns on the second drain-side select transistor and the second source-side select transistor, supplies a first voltage to the word line in a state where the first drain-side select transistor and the first source-side select transistor are turned off, and then, supplies a second voltage to the word line in a state where the first drain-side select transistor and the first source-side select transistor are turned on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.