Inventor · Yokohama, JP

Hidehiro Shiga

44Patents
6h-index
40Co-inventors
69Inventor score

Filing activity: Jul 23, 2003 → Nov 2, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8724391B2 Semiconductor memory device Physics 14 Active
US7315194B2 Booster circuit Electricity 11 Expired
US9355731B2 Semiconductor memory device and data erasing method Electricity 7 Active
US7269049B2 Ferroelectric random access memory device Physics 7 Expired
US9704584B2 Semiconductor memory device Physics 7 Active
US8274846B2 Reference voltage generation circuit and semiconductor memory Physics 6 Active
US8976602B2 Non-volatile semiconductor device Electricity 6 Active
US9349464B2 Non-volatile semiconductor device Electricity 6 Active
US9767908B2 Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation Physics 5 Active
US11264106B2 Semiconductor memory device including memory cells at opposing sides of semiconductor Physics 4 Active
US8059445B2 Ferroelectric memory Physics 4 Active
US11282559B1 Memory device Electricity 4 Active
US10347338B2 Memory device and memory controller Physics 3 Active
US7518901B2 Ferroelectric semiconductor memory device and method for reading the same Physics 3 Active
US7397687B2 Ferroelectric memory device having ferroelectric capacitor Physics 3 Active
US8134349B2 Power supply circuit that outputs a voltage stepped down from a power supply voltage Physics 2 Active
US7561459B2 Semiconductor memory device Physics 2 Active
US11049573B2 Semiconductor storage device Physics 2 Active
US10896733B2 Semiconductor memory device and method of controlling the same Physics 1 Active
US7138674B2 Semiconductor memory device Electricity 1 Expired
US7692948B2 Semiconductor memory device Physics 1 Active
US9805804B2 Semiconductor memory device and data erasing method Electricity 1 Active
US11232843B2 Nonvolatile semiconductor storage device and method for performing a read operation on the same Physics 1 Active
US7965536B2 Ferroelectric memory device Physics 1 Active
US11901011B2 Semiconductor storage device having reduced threshold distribution interference Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.