Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength
US11232975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2018 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers. In some embodiments, a first high κ bonding structure is formed over a handle substrate. A device layer is formed over a sacrificial substrate. Outer most sidewalls of the device layer are between outer most sidewalls of the sacrificial substrate. A second high κ bonding structure is formed over the device layer. The first high κ bonding structure is bonded to the second high κ bonding structure, such that the device layer is between the sacrificial substrate and the handle substrate. A first removal process is performed to remove the sacrificial substrate. The first removal process comprises performing a first etch into the sacrificial substrate until the device layer is reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.