Patent · US Active

Bonded three-dimensional memory devices and methods for forming the same

US11233041B2 · kind B2 · utility

1Cited by

3References

20Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Shiqi Huang · Beijing, CN
Wei Liu · 红钢城街道, CN
Bater Chelon · 红钢城街道, CN
Siping Hu · 红钢城街道, CN

Key dates

Filing date	Jan 10, 2020
Grant date	Jan 25, 2022
Priority date	—
Expiry date	Apr 11, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure, which includes a plurality of first NAND memory strings, a plurality of first BLs, at least one of the first BLs being conductively connected to a respective one of the first NAND memory strings; and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs, respectively. The 3D memory device further includes a second semiconductor structure, which includes a plurality of second NAND memory strings, a plurality of second BLs, at least one of the second BLs being conductively connected to a respective one of the second NAND memory strings, and a second bonding layer having a plurality of second bit line bonding contacts conductively connected to the plurality of second BLs, respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.