Thin film transistor and manufacturing method thereof, array substrate and display panel

US11233070B2 · kind B2 · utility

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Jilei Gao · Beijing, CN
• Xuebing Jiang · Beijing, CN
• Songmei Sun · Beijing, CN
• Peng Wu · Zhuhai, CN
• Jian Zhao · Beijing, CN
• Yang Zhang · San Diego, US
• Mo Chen · Beijing, CN

Key dates

• Filing date: Mar 23, 2020
• Grant date: Jan 25, 2022
• Expiry date: Apr 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/00

Abstract

A thin film transistor, a manufacturing method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an active layer and a source/drain electrode layer which are on the base substrate. The source/drain electrode layer includes a source electrode and a drain electrode. The thin film transistor further includes a light blocking layer surrounding the active layer.