Peng Wu
32Patents
3h-index
50Co-inventors
66Inventor score
Filing activity: Nov 13, 2001 → Sep 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7326401B2 | MWW type zeolite substance, precursor substance therefor, and process for producing these substances | Chemistry; Metallurgy | 15 | Expired |
| US8470621B2 | Method for fabricating a flip-chip semiconductor optoelectronic device | Electricity | 14 | Active |
| US6759540B2 | Crystalline MWW-type titanosilicate catalyst for producing oxidized compound, production process for the catalyst, and process for producing oxidized compound by using the catalyst | Performing Operations; Transporting | 10 | Expired |
| US10636816B2 | Thin film transistor and manufacturing method thereof, array substrate and display panel | Electricity | 3 | Active |
| US8093082B2 | Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof | Electricity | 2 | Active |
| US10186464B2 | Array substrate motherboard, array substrate and method of manufacturing the same, and display device | Physics | 2 | Active |
| US8202752B2 | Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device | Electricity | 2 | Active |
| US7323154B2 | Titanosilicate, process for its production, and its use in producing oxidized compound | Performing Operations; Transporting | 1 | Expired |
| US8574939B2 | Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof | Electricity | 1 | Active |
| US9082934B2 | Semiconductor optoelectronic structure with increased light extraction efficiency | Electricity | 1 | Active |
| US7943494B2 | Method for blocking dislocation propagation of semiconductor | Electricity | 1 | Active |
| US8217400B2 | Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the same | Electricity | 1 | Active |
| US11160166B2 | Printed circuit board with high-capacity copper circuit | Emerging Cross-Sectional Technologies | 1 | Active |
| US7560094B2 | Modified layered metallosilicate material and production process thereof | Performing Operations; Transporting | 1 | Expired |
| US8513696B2 | Lateral thermal dissipation LED and fabrication method thereof | Electricity | 1 | Active |
| US9708238B2 | Cycloalkane oxidation catalysts and method to produce alcohols and ketones | Chemistry; Metallurgy | 1 | Active |
| US11584692B2 | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate RETa/NbO4 ceramic powder and preparation method thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US8580590B2 | Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor | Electricity | 0 | Active |
| US9977279B2 | Color filter substrate and manufacturing method thereof, and display device | Physics | 0 | Active |
| US11897779B2 | Microporous aluminotitanosilicate crystalline zeolite, method of preparation and applications thereof | Chemistry; Metallurgy | 0 | Active |
| US11942521B2 | Epitaxial layers with discontinued aluminium content for III-nitride semiconductor | Electricity | 0 | Active |
| US11582872B2 | Circuit board | Electricity | 0 | Active |
| US9907167B1 | Method for manufacturing a printed circuit board with high-capacity copper circuit | Emerging Cross-Sectional Technologies | 0 | Active |
| US12080808B2 | Cross-coupled gated tunnel diode (XTD) device with increased peak-to-valley current ratio (PVCR) | Electricity | 0 | Active |
| US12034070B2 | Semiconductor device structures and methods of manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.