Silicon substrate containing integrated porous silicon electrodes for energy storage devices
US11233288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jul 25, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes forming at least one trench in a non-porous silicon substrate, the at least one trench providing an energy storage device containment feature. The method also includes forming an electrical and ionic insulating layer disposed over a top surface of the non-porous silicon substrate. The method further includes forming, in at least a base of the at least one trench, a porous silicon layer of unitary construction with the non-porous silicon substrate. The porous silicon layer provides at least a portion of a first active electrode for an energy storage device disposed in the energy storage device containment feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.