Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
US11237472B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 1, 2018 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.