Memory device and method for forming the same

US11239247B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zhongwang Sun · Hubei, CN
• Rui Su · 红钢城街道, CN
• Zhong Zhang · 红钢城街道, CN
• Wenxi Zhou · 红钢城街道, CN
• Zhiliang Xia · 红钢城街道, CN

Key dates

• Filing date: Jun 12, 2020
• Grant date: Feb 1, 2022
• Expiry date: Sep 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

Memory device includes a bottom-select-gate (BSG) structure including cut slits vertically through the BSG structure, on a substrate. A cell-layers structure is formed on the BSG structure. Gate-line slits are formed vertically through the cell-layers structure and the BSG structure, into the substrate and arranged along a first lateral direction to distinguish finger regions. A first gate-line slit is between first and second finger regions and includes gate-line sub-slits. The first finger region is divided into a first string region and a second string region by a first cut-slit, formed in the first finger region along a second lateral direction and further extended into at least the second finger region along the first lateral direction. At least one BSG defined by the first cut-slit is located in at least the second finger region to connect to cell strings in the first string region through an inter-portion between adjacent gate-line sub-slits.