Back-illuminated semiconductor photodetection element
US11239266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Apr 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a plurality of second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. An insulating film includes a first insulating film covering surfaces of the second semiconductor regions, and a second insulating film covering peripheries of pad electrodes. The pad electrodes include a first electrode region in contact with the second region, and a second electrode region continuous with the first electrode region. The second electrode region is disposed on at least a part of a region included in the first insulating film and corresponding to the first region. The first main surface is a light incident surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.