Image sensor for high photoelectric conversion efficiency and low dark current
US11239274B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Jun 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.