Growth method and apparatus for preparing high-yield crystals
US11242615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2019 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Nov 30, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages: the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obvious…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.