Polycrystalline silicon rod and method for producing polycrystalline silicon rod
US11242620B2 · kind B2 · utility
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Key dates
| Filing date | Jul 3, 2018 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Nov 16, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.