Patent · US Active

Reflective mask and fabricating method thereof

US11243461B2 · kind B2 · utility

4Cited by

14References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Tsiao-Chen Wu · Hsinchu, TW
Pei-Cheng Hsu · Taipei, TW

Key dates

Filing date	Oct 17, 2019
Grant date	Feb 8, 2022
Priority date	—
Expiry date	May 18, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/82
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.