Tsiao-Chen Wu
25Patents
4h-index
39Co-inventors
63Inventor score
Filing activity: Aug 24, 2000 → Mar 1, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8877409B2 | Reflective mask and method of making same | Electricity | 306 | Active |
| US8765330B2 | Phase shift mask for extreme ultraviolet lithography and method of fabricating same | Physics | 83 | Active |
| US11243461B2 | Reflective mask and fabricating method thereof | Physics | 4 | Active |
| US9213232B2 | Reflective mask and method of making same | Electricity | 4 | Active |
| US6383693B1 | Method of forming a photomask utilizing electron beam dosage compensation method employing dummy pattern | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7169701B2 | Dual damascene trench formation to avoid low-K dielectric damage | Electricity | 3 | Expired |
| US9864270B2 | Pellicle and method for manufacturing the same | Physics | 3 | Active |
| US11402761B2 | Semiconductor lithography system and/or method | Physics | 2 | Active |
| US7838173B2 | Structure design and fabrication on photomask for contact hole manufacturing process window enhancement | Physics | 2 | Active |
| US9538628B1 | Method for EUV power improvement with fuel droplet trajectory stabilization | Electricity | 2 | Active |
| US8124323B2 | Method for patterning a photosensitive layer | Physics | 2 | Active |
| US10509311B1 | Apparatus and method for generating an electromagnetic radiation | Electricity | 1 | Active |
| US8394576B2 | Method for patterning a photosensitive layer | Physics | 1 | Active |
| US9389506B2 | Photoresist having improved extreme-ultraviolet lithography imaging performance | Physics | 1 | Active |
| US11199767B2 | Apparatus and method for generating an electromagnetic radiation | Electricity | 0 | Active |
| US9081280B2 | Photoresist having improved extreme-ultraviolet lithography imaging performance | Physics | 0 | Active |
| US8815496B2 | Method for patterning a photosensitive layer | Physics | 0 | Active |
| US12321100B2 | Semiconductor lithography system and/or method | Physics | 0 | Active |
| US9847302B2 | Wafer surface conditioning for stability in fab environment | Electricity | 0 | Active |
| US10162276B2 | Apparatus for shielding reticle | Electricity | 0 | Active |
| US12038684B2 | Reflective mask and fabricating method thereof | Physics | 0 | Active |
| US11921430B2 | Semiconductor lithography system and/or method | Physics | 0 | Active |
| US11630386B2 | Reflective mask and fabricating method thereof | Physics | 0 | Active |
| US8988652B2 | Method and apparatus for ultraviolet (UV) patterning with reduced outgassing | Physics | 0 | Active |
| US10310380B2 | High-brightness light source | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.