Etching method, plasma processing apparatus, and processing system
US11244804B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 29, 2020 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.