Apparatus for manufacturing a thin film and a method therefor
US11244822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Nov 20, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45561
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.