Semiconductor manufacturing method and apparatus thereof
US11244827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Jul 2, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95676
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.