Process gas supply apparatus and wafer treatment system including the same
US11244837B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2020 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Jun 16, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J4/001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a process gas supply apparatus which supplies a process gas onto a wafer to etch an oxide layer by dividing an edge zone into a first zone and a second zone located outside the first zone and dividing the second zone into a plurality of sub-zones and a wafer treatment system including the process gas supply apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.