Systems and methods for junction termination of wide band gap super-junction power devices

US11245003B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Stephen Daley Arthur · Glenville, US
• Victor Torres · Clifton Park, US
• Michael J. Hartig · Austin, US
• Reza Ghandi · Niskayuna, US
• David Alan Lilienfeld · Niskayuna, US
• Alexander Viktorovich Bolotnikov · Niskayuna, US

Key dates

• Filing date: Jul 19, 2019
• Grant date: Feb 8, 2022
• Expiry date: Jul 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.