Method for manufacturing a donor substrate for making optoelectronic devices
US11245050B2 · kind B2 · utility
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Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Feb 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.