Method of depositing silicon nitride
US11251037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2019 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Aug 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3323
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.