Plasma processing method and plasma processing apparatus
US11251048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Jun 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.