Transient stabilized SOI FETs
US11251140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same VDS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same VGS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both VGS and VDS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.