Three-dimensional memory device without gate line slits and method for forming the same

US11251195B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zongliang Huo · 红钢城街道, CN
• Haohao Yang · 红钢城街道, CN
• Wei Xu · Tangxia, CN
• Ping Yan · Nanhu, CN
• Pan Huang · 红钢城街道, CN
• Wenbin Zhou · Kunshan, CN

Key dates

• Filing date: Oct 31, 2019
• Grant date: Feb 15, 2022
• Expiry date: Oct 31, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the 3D memory device includes a stack structure. The stack structure includes a plurality of conductor layers and a plurality of insulating layers interleaved over a substrate. The plurality of conductor layers include a pair of top select conductor layers divided by a first top select structure and a pair of bottom select conductor layers divided by a bottom select structure. The first top select structure and the bottom select structure extend along a horizontal direction and are aligned along a vertical direction. A plurality of channel structures extend along a vertical direction and into the substrate and are distributed on both sides of the top select structure and the bottom select structure.