Needle cell trench MOSFET
US11251275B2 · kind B2 · utility
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22Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 9, 2019 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Aug 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor die has a semiconductor body coupled to first and second load terminals, and at least one power cell. In a horizontal cross-section of the at least one power cell, a contact has a contact region which horizontally overlaps with a field plate electrode and horizontally protrudes from the field plate trench, and a recess region does not horizontally overlap with the contact region and extends into a horizontal circumference of the field plate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.