MOSFET device with shielding region and manufacturing method thereof
US11251296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2019 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Nov 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.