Edoardo ZANETTI
12Patents
1h-index
9Co-inventors
43Inventor score
Filing activity: Dec 17, 2009 → Nov 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8344449B2 | Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained | Electricity | 2 | Active |
| US11798981B2 | 4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof | Electricity | 1 | Active |
| US11251296B2 | MOSFET device with shielding region and manufacturing method thereof | Electricity | 1 | Active |
| US12148824B2 | MOSFET device with shielding region and manufacturing method thereof | Electricity | 0 | Active |
| US11329131B2 | 4H-SiC MOSFET device and manufacturing method thereof | Electricity | 0 | Active |
| US11545362B2 | Manufacturing method of a semiconductor device with efficient edge structure | Electricity | 0 | Active |
| US11018008B2 | Manufacturing method of a semiconductor device with efficient edge structure | Electricity | 0 | Active |
| US11854809B2 | Manufacturing method of a semiconductor device with efficient edge structure | Electricity | 0 | Active |
| US12342582B2 | 4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof | Electricity | 0 | Active |
| US8580640B2 | Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained | Electricity | 0 | Active |
| US12255233B2 | Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof | Electricity | 0 | Active |
| US12308235B2 | Manufacturing method of a semiconductor device with efficient edge structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.