Photodetector structures formed on high-index substrates
US11251320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Jun 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/16
Abstract
A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.