Patent · US Active

Photodetector structures formed on high-index substrates

US11251320B2 · kind B2 · utility

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1References
20Claims
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Key dates

Filing dateApr 9, 2020
Grant dateFeb 15, 2022
Priority date
Expiry dateJun 19, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/16

Abstract

A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.