Patent · US Active

Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer

US11251339B2 · kind B2 · utility

0Cited by
0References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 26, 2019
Grant dateFeb 15, 2022
Priority date—
Expiry dateSep 26, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/872
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A process for fabricating an optoelectronic device for emitting infrared radiation, including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.