Cobalt precursor and methods for manufacture using the same
US11254698B2 · kind B2 · utility
0Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.