Semiconductor device of electrostatic discharge protection

US11257807B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Ting-Yao Lin · Hengshan, TW
• Chun-Ting Chiang · Hsinchu, TW
• Ping-Chen Chang · Chunri, TW
• Tien-Hao Tang · Hsinchu, TW

Key dates

• Filing date: Dec 3, 2020
• Grant date: Feb 22, 2022
• Expiry date: Dec 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

A semiconductor device of electrostatic discharge (ESD) protection is provided, including a deep N-type region, disposed in a substrate; a deep P-type region, disposed in the substrate; a first P-type well, disposed in the deep N-type region; a first N-type well, abutting to the first P-type well, disposed in the deep N-type region. Further, a second P-type well abutting to the first N-type well is disposed in the deep P-type region. A second N-type well abutting to the second P-type well is disposed in the deep P-type region. A side N-type well is disposed in the deep N-type region at an outer side of the first P-type well. A side P-type well is disposed in the deep P-type region at an outer side of the second N-type well.