Image sensors including photoelectric conversion devices, trench, supporter, and isolation layer
US11257857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Mar 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.