High voltage demos transistor with improved threshold voltage matching
US11257907B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2020 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type. First and second wells are located within the substrate, the first well being formed with a dopant of the first conductivity type, e.g. n-type, and the second well formed with a dopant of a second different conductivity type, e.g. p-type. A doped gap region is located between the first and second wells. The doped gap region is formed with a dopant of the second conductivity type, e.g. p-type, at a lower dopant concentration than the dopant concentration in the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.