Patent · US Active

Sonos stack with split nitride memory layer

US11257912B2 · kind B2 · utility

0Cited by

27References

13Claims

0Family size

Assignee

LONGITUDE FLASH MEMORY SOLUTIONS LTD. · IE

Inventors

Fredrick B. Jenne · Tracy, US
Krishnaswamy Ramkumar · San Jose, US

Key dates

Filing date	Sep 28, 2020
Grant date	Feb 22, 2022
Priority date	—
Expiry date	Sep 28, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method of manufacturing the same are provided. In one embodiment, method includes forming a first oxide layer over a substrate, forming a silicon-rich, oxygen-rich, oxynitride layer on the first oxide layer, forming a silicon-rich, nitrogen-rich, and oxygen-lean nitride layer over the oxynitride layer, and forming a second oxide layer on the nitride layer. Generally, the nitride layer includes a majority of charge traps distributed in the oxynitride layer and the nitride layer. Optionally, the method further includes forming a middle oxide layer between the oxynitride layer and the nitride layer. Other embodiments are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.