Chain scission resist compositions for EUV lithography applications
US11262654B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Dec 27, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.