Voltage regulation system for memory bit cells
US11264060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jul 13, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, apparatuses, and methods for dynamically generating a memory bitcell supply voltage rail from a logic supply voltage rail are disclosed. A circuit includes at least one or more comparators, control logic, and power stage circuitry. The circuit receives a logic supply voltage rail and compares the logic supply voltage rail to threshold voltage(s) using the comparator(s). Comparison signal(s) from the comparator(s) are coupled to the control logic. The control logic generates mode control signals based on the comparison signal(s) and based on a programmable dynamic range that is desired for a memory bitcell supply voltage rail. The mode control signals are provided to the power stage circuitry which generates the memory bitcell supply voltage rail from the logic supply voltage rail. A voltage level of the memory bitcell supply voltage rail can be above, below, or the same as the logic supply voltage rail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.