Patent · US Active

Substrate processing method

US11264236B2 · kind B2 · utility

0Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 13, 2019
Grant dateMar 1, 2022
Priority date
Expiry dateDec 13, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67103
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.